QM3001K p-ch 30v fast switching mosfets symbol parameter rating units 10s steady state v ds drain-source voltage -30 v v gs gate-sou r ce voltage 20 v i d @t a =25 continuous drain current, v gs @ -10v 1 -3.8 -3.3 a i d @t a =70 continuous drain current, v gs @ -10v 1 -3.1 -2.7 a i dm pulsed drain current 2 -17 a p d @t a =25 total power dissipation 3 1.32 1 w p d @t a =70 total power dissipation 3 0.84 0.64 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 125 /w r ja thermal resistance junction-ambient 1 (t 10s) --- 95 /w r jc thermal resistance junction-case 1 --- 80 /w bvdss rdson id -30v 52m ? -3.3a the QM3001K is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the small power switching and load switch applications . the QM3001K meet the rohs and green product requirement , with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data to252 pin configuration product summery g s d product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -30 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =-1ma --- -0.023 --- v/ r ds(on) static drain-source on-resistance 2 v gs =-10v , i d =-3a --- 42 52 m v gs =-4.5v , i d =-2a --- 75 90 v gs(th) gate threshold voltage v gs =v ds , i d =-250ua -1.2 -1.6 -2.5 v v gs(th) v gs(th) temperature coefficient --- 4 --- mv/ i dss drain-source leakage current v ds =-24v , v gs =0v , t j =25 --- --- -1 ua v ds =-24v , v gs =0v , t j =55 --- --- -5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =-5v , i d =-3a --- 11 --- s q g total gate charge (-4.5v) v ds =-15v , v gs =-4.5v , i d =-3a --- 6.4 9.0 nc q gs gate-source charge --- 2.3 3.2 q gd gate-drain charge --- 1.9 2.7 t d(on) turn-on delay time v dd =-15v , v gs =-10v , r g =3.3 , i d =-3a --- 2.8 5.6 ns t r rise time --- 8.4 15.1 t d(off) turn-off delay time --- 39 78.0 t f fall time --- 6 12.0 c iss input capacitance v ds =-15v , v gs =0v , f=1mhz --- 583 816 pf c oss output capacitance --- 100 140 c rss reverse transfer capacitance --- 80 112 symbol parameter conditions min. typ. max. unit i s continuous source current 1,4 v g =v d =0v , force current --- --- -3.3 a i sm pulsed source current 2,4 --- --- -17 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1 v t rr reverse recovery time i f =-3a , di/dt=100a/s , t j =25 --- 7.8 --- ns q rr reverse recovery charge --- 2.5 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the power dissipation is limited by 150 junction temperature 4.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) diode characteristics sales@twtysemi.com 2 of 2 http://www.twtysemi.com QM3001K p-ch 30v fast switching mosfets product specification
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